The Next Generation MRAM Company
Avalanche Technology, headquartered in Fremont, California, is the world leader in Spin Transfer Torque Magnetic RAM (STT-MRAM) non-volatile memory leveraging perpendicular magnetic tunnel junction (pMTJ) cell structure manufactured on 300mm standard CMOS process.
Backed by more than 300+ granted patents around cell, circuit, and system design leveraging MRAM, our technology and products provide breakthrough speeds, unlimited endurance and non-volatility while reducing power and cost. With such attributes, our technology will serve and exceed our customers’ objectives as a replacement for SRAM, eFlash, and ROM in embedded applications in addition to discrete SRAM, non-volatile SRAM, NOR and DRAM.
Avalanche’s Persistent SRAM (P-SRAM) is a non-volatile memory utilizing an advanced pMTJ STT-MRAM technology and is offered with either a Serial Peripheral Interface (SPI) or a parallel interface (x8/x16). The products on this page are ideal for industrial applications.
- Serial High Performance - 1MB to 16Mb
- Serial SPI - 1Mb to 16Mb
- Parallel x8 - 1Mb to 32Mb
- Parallel x16 - 1Mb to 32Mb